Charity and Technology Paper Essay Example | Topics and Well Written Essays - 1500 words

Charity and Technology Paper - Essay Example †¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦.6 Investment Recommendation†¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦...7 Conclusion†¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦...8 References†¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦9 Appendices†¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚ ¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦Ã¢â‚¬ ¦.10 Introduction The following paper includes the discussion about the preparation of Smartphone application for the purpose of raising funds for a charity named CRY (Child Rights and You). The paper includes the description of the smart phone application and the description of its functionalities. The paper also discusses about the marketing mix and the marketing process that will be used in order to promote the product or application for raising more and more funds for the Charity. The paper also includes the STP process to be applied for the application and the environmental analysis for the evaluation of existing environment. CRY CRY is a nongovernmental organizations working for the development and rights of poor children who are the victim of illiteracy, malnutrition, and social menace and so on. The main obj ective of CRY is to bring the attention of society towards these suffering children and gather funds to help them financially and provide them food and shelter and also work towards eradicating this condition of poor children. Product Smartphone application The Smartphone application to be prepared by the programmer will be related to the communication platform which will provide quick access to different social networking websites and allow individuals to use the application for chatting on these websites using the Smartphone. Due to the wide popularity of the social networking websites and high trend of people accessing them on their Smartphone’s, the application will be highly used by people around the globe. The application once used will pay some amount of funds for the charity from the individual registering for the application. It will also pay some part of the monthly charges that the user will pay for using the application. There will also be an option for direct don ations to the charity (Harty 2009). The application will also include the video chat feature which will help to popularise the application. The application will also include direct links related to the charity CRY, and on every start up of the application an advertisement of the charity will be flashed in order to promote individuals for giving donations to the charity. The Smartphone application will also include the feature of direct access to the CRY website and different videos and pictures will be flashed on the

Custom Building of an IT Infrastructure of an Organization Assignment

Custom Building of an IT Infrastructure of an Organization - Assignment Example In other words, customization helps an organization to get the right tool for the right job.   Once the organization has come to an understanding with the IT department too custom build the IT infrastructure, there are various methods which can be of great help in achieving this. Some of these methods are as explained below.   There is this famous saying that says: â€Å"if you can’t beat them, join them.† You can never defeat an expert in his own game, so, the only constructive choice that you have is to seek out his expertise to improve the way you handle your operations. This method of building your IT infrastructure is the best so far since in as much you get expert advice on how you can solve your problems with their diverse experience and knowledge; they will give you different alternatives and then help you in deciding the right avenue for your organization. One of the advantages that make this method stand out is that experts will never go wrong in helping you to decide for your organization (this statement is only true if you let them understand your business’ operations). The disadvantage of this method is that experts are always expensive to hire or consult.   One of the greatest assets that a company can have when it comes to technology is the IT department.

Ethics Essay Essay Example for Free

Ethics Essay Essay There are different systems in which an individual or a company could make ethical decisions. They can vary depending on the issue at hand and they relate and different in certain ways. In this writing I will compare the similarities and differences between virtue theory, utilitarianism, and deontological ethics. I will include a description of the differences in how each theory addresses ethics and morality. And I will give a personal experience to explain the relationship between virtue, values, and moral concepts as they relate to one of the three theories. Ethical systems based on abstract values are described as virtue theory. Virtue theory is based on character ethics. It is the viewpoint that in living one’s life one should try to cultivate excellence in all they do and in all that other do. This is the system that would address ethics and morality from the perspective of living with high values and with great character (Boylan, 2009). Quoting Boylan (2009) from our book, â€Å"Utilitarianism is a theory that suggests that an action is morally right when that action produces more total utility for the group than any other alternative† (pp. 153). Utilitarianism focuses on what is best for the group or team as a whole. This theory asks, â€Å"What ethical decision will profit the most for the largest amount of people?† Deontology is a moral theory that emphasizes one’s duty to do a particular action just because the action, itself, is inherently right and not through any other sorts of calculations (Boylan, 2009). Calculations like what the consequences of that action might be. Deontology is a duty-based theory when addressing ethics and morality. In comparing these three, a utilitarian working for ATT might overlook a bad credit report to make a deal because the deal would help the company and the  client. Therefore it’s a win-win. A deontologist might make the same decision based on the fact that the client needs a cell phone to be able to take care of business in order to take of her children. The simple fact that the action is inherently right regardless of the consequences is the bases for the deontologist. And to the contrary only a virtuous worker would have integrity and do what was in the best interest of the company. A personal experience of mine to relate these topics would be a girlfriend of mine just got out of a bad relationship where she was not married, but had a child with this man. She lived with the father of her child for many years although he was abusive and was providing home that was unsafe and insufficient for her and her child. She stayed for many years making decisions as a utilitarian until one day she changed to a deontologist. She chose to leave the state and ignore the rights of the father on the grounds that he was abusing both her and her son. She valued her and her son’s health over anything. She was virtuous in that she rose above the desire to retaliate and pursued only their protection. And all of her actions where based on her moral concepts, according to her beliefs and understanding. In conclusion, there are many different theories and ways to make ethical decisions. I have related and compared the virtue theory, utilitarianism, and deontology. I have also shared a personal experience to relate virtue, values, and moral concepts to one of these theories. Life and business are about making decisions and these concepts and theories are a foundation to a healthy life and a healthy business. References Thompson, S. (2014). What is the relationship among virtue, values moral concepts in individual and business contexts?. Retrieved from http://smallbusiness.chron.com/relationship-among-virtue-values-moral-concepts-individual-business-contexts-69097.html Boylan, M. (2009). Basic Ethics. : Prentice Hall.

Positive reinforcement within the classroom

Positive reinforcement within the classroom Positive reinforcement within the classroom. Classroom management and discipline is the most challenging aspect of teaching (Yost Mosa, 2002). Aksoy (2003) describes classroom environment as; multifaceted, simultaneous, fast occurring, and unpredictable. This environment means that at any time, teachers have to attend to a vast range of pupil needs fairly and consistently. (Edwards 2003). It is therefore important teachers implement and refine strategies focusing on reducing behavioural issues in order to maximise potential for learning and ensure smooth classroom practise. Due to the increased diversity of pupils in schools teachers now encounter a much wider range of behavioural difficulties in an average class, this is partly as a result of the Individuals with Disabilities Education Act (Quinn et al., 2001). Interestingly the most common request for assistance from teachers relates to behaviour and classroom management (Rose Gallup 2005). Disruptions in class take up student’s valuable learning time and decreases potential learning opportunities of the class. (Witzel Mercer Miller 2003, Cains Brown, 1996) Teachers who regularly encounter problematic behaviour often report increased amounts of stress and frustration (Browers Tomic, 2000). This in some circumstances can make teachers question their capability for their role (witzel, Miller and Mercer 2003). The importance of classroom management in reinforced by Shinn, Ramsey, Walker, Stieber, Oà ¢Ã¢â€š ¬Ã… ¸Neill (1987) who found classrooms frequently experiencing behavioural disruptions had less time engaging in learning, and pupils tended to leave school with lower grades compared to peers. Within the literature it is clear that there is a wide spectrum of strategies implemented by teachers to increase effectiveness of behaviour management strategies. Some educators argue strong discipline and setting limits are most effective, others assume creating an exciting curriculum works best. All strategies highlight the importance on how to behave, pupil responsibilities and adhering to class and social norms. It is also clear that many of the strategies identified have a basis embedded in psychological principle. These include behavioural, psychodynamic, biological and developmental approaches. It has often been disputed how best to apply psychological theory to classroom practice. This review will focus on the use of positive reinforcement in classroom management. Theories will be discussed, evaluated and related to classroom practice. What defines Positive reinforcement? Positive reinforcement refers to the implementation of positive stimuli to desirable behaviour. Described by Skinner (1938) as operant conditioning, it is used to increase the probability of desired behaviour occurring again (Fontana 1994). It is most effective if implemented immediately after desired behaviour occurs and often used as a behaviour management strategy. It can be applied through social cues (a simple smile), positive feedback and reward/sanction systems and best used alongside a classroom context (rules and routines). Theoretical basis of positive reinforcement Behavioural theories have been highly influential to positive reinforcement in the classroom, although they have not always been highly regarded by the educational community (Axelrod 1997). Nevertheless the use of positive reinforcement appears frequently within literature regarding behaviour management. It is important to identify principles underlying positive reinforcement and the criticisms to these theories. Also how these core behavioural principles can be converted to classroom practise and the issues surrounding implementing techniques. The first major contribution to positive reinforcement was Edward Thorndike’s â€Å"Law effect† (1911) which implies behaviour that generates positive effects on the environment are more likely to be continued (Miltenburger, 2008). This implied reinforcement and praise play fundamental role in shaping behaviour. Shortly after this Watson (1913) describes â€Å"Behaviourism†. He bases his theory on the understanding that behaviour is learned and therefore can be unlearned. Behavioural changes are therefore due to environmental circumstances (Miltenberger 2008). Ivan Pavlov (1927) describes â€Å"Classical conditioning†, in which a stimulus is linked to a naturally occurring response that occurs with a different stimulus to evoke an unnatural response. This manifests in a classroom scenario such as using a â€Å"finger click† to attract attention. It is a strategy used to consistently hint students to stop working. This example explains a â€Å"conditioned† behaviour in which pupils have been taught to behave in a specific manor to an unrelated cue. Much of his work at the time was conducted on animals within Laboratories. B.F. Skinner’s research has been significant in the development of positive reinforcement (Labrador 2004). He argued that positive reinforcement was more effective than punishment when trying to modify behaviour. Through his study he identifies â€Å"operant conditioning† which explains how reinforcement and punishment play a key role in the recurrence of behaviour. He explains how behaviour that is consistently reinforced with praise/ rewards will occur more often. He identifies five obstacles that inhibit children’s ability to learn. These included fear of failure, complication of task, clarity, direction and lack of reinforcement (Frisoli 2008). Additionally he recognises techniques such as breaking tasks down, repeating directions and giving positive reinforcement (Frisoli 2008). Classroom research that followed was based on his findings. Studies focused on adult’s childrearing (Baumrind, 1971) and children in a Laboratory setting (Kenney Willicut, 1964; Soloman, 1964). Most studies found reward to be more effective at managing and influencing behaviour. Bandura (1965) explains these findings as a product of children’s previous conditioned responses to reward and punishment, influencing its success in class. The Importance of Positive reinforcement Positive reinforcement refers to any event that follows a behaviour used to increase the chances of the behaviour reoccurring. It can also be used to motivate students. (Domjam 2003). Bracey (1994) states; 15 years of research have confirmed that reinforcing behaviour can increase the likelihood that the behaviour will be performed under subsequent non-rewarded conditions. Similarly Miltenberger (2008) states â€Å"disruptive behaviours can be controlled or eliminated with behavioural intervention† (p11). Due to this considerable research has been conducted into the application of positive reinforcement in schools. It is used to further teaching methods, control inappropriate behaviours and improve social and functional skills (Miltenberger, 2008). Positive reinforcement techniques have however been perceived to threaten individual’s freedoms (maag 2001). Society perceives reinforcement as externally applied to an individual with the aim of coercing behaviour and leading them to become dependable on extrinsic reinforcement (maag 2001). Although an understandable concern, Akin-Little, Eckert, Lovett (2004) describe these concerns as unwarranted. Studies have found positive reinforcement to increase intrinsic motivation (Cameron, Banko, Pierce, 2001), especially rewards based on meeting a performance objective (Eisenberger, Pierce, Cameron 1999). Conroy et al (2009) describes how ‘teacher reactions’ play a significant role in influencing students behaviour, pupils will try to gain attention through predictable behaviour linked to common teacher reactions. For example, a teacher who focuses attention solely on disruptive behaviour will cause children to behave in a disruptive manor in order to gain the teachers attention. Teachers should use positive attention within feedback to influence desired behaviour (Conroy et al 2009). Chityo Wheeler (2009) highlight the importance of using positive reinforcement with pupils that show signs of behavioural difficulties. Due to the nature of their difficulties and the disruptive effect on the class it is imperative to positively reinforce desired behaviour for these students (Chityo Wheeler 2009). Positive reinforcement in the classroom. Consequences Positive reinforcement influences desired behaviour, ignoring undesired behaviour decreases the chance of it reoccurring (Conroy et al, 2009). Rules and routines are used to prevent unsuitable behaviour. They establish behavioural context for the classroom and instruct pupils on expected behaviour and the consequences if inappropriate behaviour continues (Colvin et al., 1993). This method of instructing behavioural expectations is used in nearly every school and vital to creating a productive learning environment. Chitiyo Wheeler (2009) expand on this by explaining how appropriate behaviour can be established through modelling desired behaviour and by building naturally occurring reinforcement within the classroom environment. This involves managing inappropriate behaviour through consequences (Mather Goldstien, 2001). Rules and routines play a significant role in determining a context for consequences to be applied throughout the classroom. Consequences play a fundamental role in managing classroom behaviour and creative a positive learning environment. These are highly valuable tools used to encourage learning and prevent problem behaviour (Conroy, Sutherland, snyder, al- Hendawai and Vo 2009). Consequences should be used to further learning and stop disruptive behaviour occurring (mather Goldstien 2001). Mather and Goldstien (2001) describe a consequence approach to managing behaviour. This involves defining the problem, developing a behaviour plan, identifying an effective reinforcement and constantly reinforcing desired behaviour. Reinforcement should occur soon after the desired behaviour occurs and used to teach appropriate behaviour, social and communication skills (Mather Goldstien 2001). Teachers must select consequences that are relevant and strengthen behaviour. Bushell (1973) refers to irrelevant consequences as neutral consequences that do not affect behaviour. It is important for teachers to evaluate use of reinforcements to make sure consequences are positively reinforcing behaviour of all individuals (Bushell 1973). Positive feedback Social reinforcement is significant to all children’s development and very common within the classroom. Social cues including walking around the class, smiling, complimenting or commenting are vital in increasing and maintaining positive behaviours. These can be implemented verbally; â€Å"I like the way your group is working!†, Written; â€Å"Great!† or through expressions such as clapping or nodding. Skinner (1953) suggests that pupils need significant amounts of social reinforcement and positive attention in the first few years of school. He argues it establishes several generalised social enforcers including; attention, approval, affection and submissiveness. It also promotes confidence and responsibility within children. Convoy (2009) found praise can improve the whole class environment. Effective praise increases positive behaviours and interactions with pupils and teachers. (Convoy et al 2009) Infantino Little (2005) describe a range of important principles governing praise; Praise should be initiated by the teacher, dependent upon desired behaviour, focusing on improvement, age appropriate and structured around individual needs. These different principles describe a wide range of factors that together determine the effectiveness of praise. Despite this huge range of significant factors Smith Rivera (1993) show how praise is most effective overall, applied to specific behaviour. In the literature behaviour specific praise has been linked to positive outcomes for students and a decrease in negative behaviour. (Thomas, Becker Madsen 1968, Ramsey, Walker Gresham 2004) Most importantly praise has been shown to increase student motivation (O’Leary Becker 1969) and have positive effects on tea ching reading and math’s (Gable Shores 1980). Morrison and Jones (2007) addressed the topic of Positive Peer Reporting. This positive action of saying positive things about pupils peers reduced tension, negative feelings and encouraged positivity throughout the class. An example of this in class is ‘star of the week’ or ‘show and tell time’. This shows how praise is not just teacher orientated, but in fact can be applied throughout the class in a variety of different ways. This can help promote more learning within the class, specifically areas of development etc social skills/ personality. Despite this the effectiveness of praise in diverse classrooms is questionable due to individual differences and prior experiences of praise (Lam, Yim and Ng 2008). Infantino Little (2005) noted student’s preferred to receive praise for good work privately, as they prefer not to be singled out. This may infer that in school there are underlying cultural perceptions within children that performing well is a bad thing or something to be ashamed of. Teachers can combat this by using group praise/rewards or by offering a range of rewards to individualize rewards and increase motivation. Praise is a good example of a commonly used environmental event used to reinforce student’s behavior (Brophy, 1981). Important studies suggest teachers do not praise good behavior as much as they could (Wehby, Symons, canale go 1998). Rewards systems Schools have used external rewards to manage behavior for many decades. The use of rewards for good behavior is directly related to academic and social success (Slavin 1997). On the contrary some evidence suggests that expectations of rewards can undermine intrinsic motivation (Holt 1983, Deci, Koestner, Ryan 1999). A reward is defined as; the offering of an environmental event in exchange for participation or achievement (Craighead, Kazdin Mahoney, 1981). To successfully shape problematic behavior students must comprehend and accept rewards used to reinforce behavior. Pupil’s perception of a ‘good’ reward has been shown to change with age (Shreeve, Boddington, Bernard, Brown, Clarke Dean, Elkins, Kemp, Lees, Miller, Oakley, Shiret 2000). This can have a major impact on the effectiveness of using reward systems. To combat this issue, Infantino Little (2005) state rewards should be â€Å"mutually agreed by students and teachers, realistic and deliverable†. Rewards can help define behavioral expectations, recognize positive behavior and provide a safe, consistent school environment (Shreeve et al 2002). This provides students with a sense of community and self belonging which increases opportunities for learning (Zimmerman 1989). Rewards are significant in helping motivate children with reading, Math’s and social skills (Reiss, 2005). Research suggests reward systems are effective at improving behavior (Clifton Cook, 2012). A wide range of factors contribute to the overall effectiveness of using classroom rewards. These include; perceived fairness, providing choices of reward, establishing a sense of community and individualizing reward systems. It is important that teachers evaluate their strategy to make sure these factors influence how reward strategies are implemented through school. Barriers to application of positive reinforcement. While implementing positive reinforcement within the classroom teachers face several barriers. Briesch and Chafouleas (2009) identifies that a lack of time and resources means teachers are unable to reinforce all desired behaviour within the class. Also there is a danger that the teacher becomes an unconditioned stimuli resulting in children only acting in specific ways in teacher presence (Briesch and Chafouleas 2009). Reinke, Lewis-Palmer Merrell (2008) describe ‘Locus of control’ being taken away from children when using excessive positive reinforcement, this resulting in a loss of intrinsic motivation. It is therefore crucial that teachers evaluate how productive their strategies are in their specific class. Another major issue within the literature is that when a child is rewarded for completion of a task many times, they tend to lose interest in the actual task and focus more on gaining the reward at the end. (Kohn 1993) this can seriously impact the learning environment and have adverse individualised effects on their attention processing systems (Hidi 1990). Also noted within literature is that teachers can easily make bad use of reinforcement and as a consequence, unintentionally reinforce negative behaviour. For example; sending a student outside for bad behaviour removes the child from the unwanted stimuli (work) and reinforces their behaviour because they have achieved their goal (not having to work). This means the underlying behaviour will most likely be repeated (Maag 2001). Another important fact to consider is that due to the culture of schools, and behaviour deemed appropriate, therefore reinforced, all children are being taught (reinforced) the same information decided by the small group of individuals who write the national curriculum. This does not promote individual learning and must surely have detrimental effects on the diversity and individualisation amongst the general population. Conclusion The use of positive reinforcement is based on a strong amount of literature that suggests behaviour is reinforced by contingent rewards. Most noticeable within laboratory experiments based on animals and food, positive reinforcement has become widely accepted as a behavioural modification strategy/tool. Due to the increasing range of pupil’s abilities in the average classroom teachers have to incorporate and build upon strategies that successfully promote progression with the vast majority of abilities encountered. In a class setting, strong rules and routines provide instructions to pupils that are used to direct behaviour. Verbal prompting of these rules can drastically increase the effectiveness of reinforcement. Consequences, rewards and positive feedback are used as an effective motivation tool and can supply incentives for behaving in specific ways, effectively influencing a wide range of decisions in the classroom. Praise is highly regarded by individuals and important to development of the self and social awareness. It has the ability to motivate students and build self confidence. To use reinforcement effectively through rewards, pupils must not become motivated solely by the reward, losing their intrinsic motivation can have adverse effects on individual motivation. To combat this reinforcement must be individualised for each child and teachers should incorporate a wide variety of reinforcement strategies into their classroom management strategy. It is important to note that how teachers apply positive can ultimately decide its effectiveness within the class. Strategies should be refined and built upon as children within the class develop or the teacher is at risk of reducing the effec tiveness of reinforcement and sometimes impacting negatively of their education. Positive reinforcement plays a fundamental role in creating a positive learning environment for all pupils. It is important it is used correctly and this involves reinforcing desired behaviour, not disruptive behaviour. Therefore it is important I use positive reinforcement in my own teaching by utilizing rewards, praise and sanctions to build a safe environment centred to learning. I will incorporate different reinforcement strategies into my teaching. The use of peer group feedback and praise is easily applied to pupil’s self assessment of the lesson and can help build social relations within the class environment to further learning. Word 2843

Transition Elements as Deep Level Dopant

Transition Elements as Deep Level Dopant HIGH RESISTIVITY SILICON: DEEP-LEVEL DOPING COMPENSATION USING ELEMENTAL GOLD INTRODUCTION 1.1  Research Background Monolithic microwave integrated circuit (MMIC) is a microwave circuit in which both active and passive components are fabricated on the same semiconductor substrate [1]. The development of MMICs has been augmented by the high demand for high-speed devices operating at microwave frequency ranging between 300 MHz and 300 GHz. Their advantages of being small, light, and cheap in large quantities have allowed the proliferation of high frequency devices such as cellular phones. However, a problem will arise when standard silicon (Si) substrate is used to operate in super high frequency environment (SHF). The high absorption of microwave power will be caused by the background free carriers present in the substrate [2]. Therefore, low loss and high resistivity substrates are needed to eliminate the problem. It can be achieved by reducing the number of background free carriers in the substrate which result in degradation of circuit performance. The III-V semiconductor materials such as GaAs, GaN and InP has been widely used in the production of high resistivity substrates due to their wide bandgap nature. However, the wafer diameter produced using III-V materials is typically from 4 to 6 [3]. This increases the cost of production since the standard wafer diameter for modern CMOS technology is 12 [4]. Furthermore, the lattice-mismatch problems will complicate the fabrication process, causing the cost to increase. Therefore, Si has been considered to be an alternative material for the III-V semiconductor compound due to less fabrication complexity and cost. However, the background impurities such as boron will enter the silicon during monocrystalline Si growth causing the increase in substrate losses at microwave range [5]. There have been efforts to use the silicon-on-insulator (SOI) technologies and silicon-on-anything (SOA) to overcome the problem. The SOI wafers can be produced by several methods: silicon-on-sapphire (SOS), separation by implanted oxygen (SIMOX), bond and etch-back SOI (BESOI), Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ [6], and epitaxial layer transfer (ELTRAN ®) [7]. For SOS approach, a thin film of Si is epitaxially grown on sapphire substrate as shown in figure 1.1. Meanwhile, the other four approaches use a similar cross section of SOI wafer as shown in figure 1.2(b) which consists of three layers: SOI layer (top layer), buried oxide (BOX) layer (middle layer) and silicon substrate (bottom layer). The purpose of the BOX layer is to electrically insulate a fine layer of SOI layer (where the circuits are placed) from the rest of the Si wafer. The SIMOX approach uses implanted silicon dioxide, SiO2 layer as the BOX layer to separate the top thin Si layer from Si substrate. Figure 1.1: Cross-section of silicon-on-sapphire (SOS) wafer [8] Figure 1.2: A schematic representation of bond and etch-back (BESOI) process [9] Apart from the mentioned approaches, BESOI, Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢, and ELTRAN ® methods involve the wafer bonding technique. For BESOI method, the thermally oxidised Si wafer (also known as handle wafer) is bonded to another Si wafer which acts as bond wafer as shown in figure 1.2(a). After the wafer bonding process, the top wafer will be etched to obtain the required thickness for SOI layer as shown in figure 1.2(b). On the other hand, implantation of gas ions, most commonly hydrogen is made after the oxidisation process for Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ method as shown in figure 1.3. The implantation process is meant for layer splitting process to achieve required thickness of SOI layer after the wafer bonding process. The processes involved in ELTRAN ® method is shown in figure 1.4. The ELTRAN ® method uses similar procedures in Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ with the difference in use of double layer porous Si layer instead of implantation of hydrogen ions. The advan tage of using Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ and ELTRAN ® methods is that the initial wafer or seed wafer can be reused for the same process. Figure 1.3: Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ process for production of SOI wafers [9] Figure 1.4: ELTRAN ® process flow based on seed wafer reusage [7] Meanwhile, the SOA technology is achieved by gluing a fully-processed SOI substrate to another substrate such as glass and alumina [10]. However, the on-chip dissipation which could cause thermal breakdown had been proven to be a severe issue [11]. Therefore, there is a need to look for the alternative to SOI and SOA wafers, which is the high resistivity bulk Si substrate. In 2009, International Technology Roadmap for Semiconductors (ITRS) had stressed the importance of high resistivity Si in radio frequency (RF) and analog/mixed signal (AMS) CMOS application [12]. There are generally two techniques for Si crystal growth: Czochralski (CZ) technique and float-zone (FZ) technique [13]. A simplified version of CZ puller, which is an apparatus used to produce monocrystalline Si ingots for CZ technique is shown in figure 1.5. The high purity polysilicon, known as electronic grade silicon (EGS) is melted in a rotating silica or quartz crucible. A seed crystal is placed in the melt and then slowly withdrawn from the melt. The molten silicon adhering to the crystal freezes or solidifies into a continuous crystal from the seed. The diameter of the crystal can be maintained by controlling the temperature of the crucible and the rotating speed of the crucible and the rod. However, the CZ process will introduce contamination to the monocrystalline Si due to the presence of oxygen, carbon monoxide and impurities such as boron and phosphorus. Figure 1.5: Czochralski crytal puller. CW represent clockwise rotation and CCW represents counter clockwise rotation [13] The FZ process, on the other hand, produces Si crystals with lower contamination as no crucible is used in the process. FZ crystals are mainly used for high power and high voltages devices due to its high resistivity. There is a commercially available high resistivity FZ-Si technology called HiResà ¢Ã¢â‚¬Å¾Ã‚ ¢ [14]. The bulk resistivity of Si produced through HiResà ¢Ã¢â‚¬Å¾Ã‚ ¢ is up to 70 kÃŽÂ ©-cm, which is suitable for future GHz and THz application. However, it is not suitable for modern CMOS processing since its maximum wafer diameter is limited to 8, which will increase the cost. Therefore, there is a need to produce high resistivity bulk CZ-Si substrate due to its low fabrication cost. Therefore, CZ process is still the most widely used method in the manufacturing of single crystal silicon. In 2003, Mallik et al. [2] introduced a new idea in developing a semi-insulating silicon through a method called deep-level doping concentration using 3d transition elements. It showed that there is possibility to produce high resistivity bulk CZ-Si substrate using deep level doping compensation. Following this work, Mallik et al. [5] managed to produce CZ-Si bulk substrate using Mn with resistivity of up to 10 kÃŽÂ ©-cm. Jordan et al. has also used Au to produce CZ-Si wafer with bulk resistivity of up to 180 kÃŽÂ ©-cm [15]. The use of Au-compensated high resistivity bulk Si substrate has been proven by Nur Z. I. Hashim et al. to be able to suppress the parasitic surface conduction (PSC) effect [16]. 1.2  Problem Statement The idea introduced by Mallik et al. [2] on developing high resistivity bulk Si substrate through deep-level doping compensation is solely based on p-type CZ-Si. Even though high resistivity bulk Si substrate has been proven to be achievable using p-type CZ-Si, it has been shown in the work by Jordan et al. [15] that higher magnitude of Au-compensated high resistivity bulk Si substrate can be achieved by using n-type CZ-Si. The potential and problem of using transition elements other than Au as the deep level dopants to produce high resistivity bulk n-type CZ-Si substrate have not been discussed by the work mentioned above. 1.3  Objectives of Research There are three main objectives that must be met in this research project: To investigate the potential of using transition elements as deep level dopant for n-type Si substrate as compared to p-type Si substrate. To analyse the result obtained through numerical calculation using MATLAB by comparing it with the experimental data. To make comparative study on the resistivity and effectiveness of the high resistivity bulk substrate produced using n-type CZ-Si with other materials such as III-V semiconductor materials. 1.4  Scope of Research The scope of this project is to analyse the resistivity plot generated by numerical calculation using MATLAB. The potential and effectiveness of each of the transition elements as deep level dopants for n-type CZ-Si will be discussed in this work. The fabrication and experiment of high resistivity bulk n-type CZ-Si substrate will not be conducted in this work. The experimental data used for comparison with the result of numerical calculation is obtained from Dr. Nur Zatil Ismah Hashim which was done at Southampton Nanofabrication Centre in 2015. LITERATURE REVIEW 2.1  Introduction There are several methods to produce high resistivity bulk Si substrate, namely proton implantation method, helium-3 ion irradiation and deep-level doping compensation method. Both proton implantation method and helium-3 ion irradiation use the charge trappings to reduce the current conduction by background free carriers. Meanwhile, the deep-level doping compensation method use the deep dopants to compensate the shallow dopants in the Si substrate. 2.2  Proton Implantation Method One of the methods to increase the resistivity of CZ-Si substrate is through proton implantation method. The bombardment of protons into Si bulk structure will create defects which can trap mobile carriers. Therefore, the carrier lifetime is low due to the presence of defects, which prevents the mobile carriers from conducting current freely in the substrate. Table 2.1 summarizes the studies conducted to produce high resistivity bulk CZ-Si substrate using proton implantation method. Table 2.1: Studies on high resistivity bulk CZ-Si substrate using proton implantation method. Contributor Year Proton Implantation Energy (MeV) Resistivity of the Produced Substrate (ÃŽÂ ©-cm) Li 1989 0.18 103 Liao et al. 1998 30 106 Wu et al. 2000 10 106 Rashid et al. 2002 17.4 105 In 1989, Li [17] managed to produce a high resistivity layer beneath Si surface layer using proton implantation and two-step annealing process. The implantation of proton and annealing process formed the buried defect layer with a resistivity of up to 103 ÃŽÂ ©-cm. Meanwhile, Liao et al. created semi-insulating regions within silicon substrate with a resistivity of 1 MÃŽÂ ©-cm [18]. It was achieved by bombarding proton beams at 30 MeV from a compact ion cyclotron to the surface of Si substrate. Following this work, the Si substrate with similar resistivity had been produced by Wu et al. using a lower proton implantation energy, which is 10 MeV [19]. In 2002, Rashid et al. reported a Si substrate with a resistivity of 0.1 MÃŽÂ ©-cm produced through their six-step implantation method using an implantation energy of 17.4 MeV [20]. The high-Q inductors and high transmission gain integrated antenna have been realised on the high resistivity Si substrate by Liao et al. and Rashid et al. respectively [18], [20]. However, the high process cost is needed for proton implantation method as an enormous dose of 1015 cm-2 to maintain the resistivity of the originally 15 ÃŽÂ ©-cm Si substrate to be higher than 1014 ÃŽÂ ©-cm [21]. 2.3  Helium-3 Ion Irradiation Technique In 1987, helium-3 ion irradiation technique has been used for carrier lifetime control of silicon power devices [22]. The charge trappings created by the helium irradiation and Coulomb scattering of the charged trap will prevent the conduction of current by free mobile carriers in the substrate [23]. Therefore, a high resistivity Si bulk substrate can be realised by the reduction in carrier lifetime. In 2014, N. Li et al. reported a high resistivity region created within CZ-Si substrate with a resistivity of over 1.5 kÃŽÂ ©-cm using a dose of 1.51013 cm-2 of helium-3 ions [24]. The produced high resistivity Si substrate has been used by N. Li et al. in both work for substrate noise isolation improvement in a CMOS process and quality factor improvement in on-chip spiral inductors [24], [25]. R. Wu et al. has also used helium-3 ion irradiation technique in their work on radiation efficiency improvement in 60-GHz on-chip dipole antenna [23]. The helium-3 ion irradiation technique has the advantage of saving the product cost up to 97% as compared to proton implantation method by reducing the dose amount from 1.01015 cm-2 to 1.51013 cm-2 [24], [25]. However, the helium-3 ion irradiation technique is comparably less studied and the problem associated with this technique has not been discussed in the work mentioned above. 2.4  Deep-Level Doping Compensation Method The idea of creating high resistivity bulk CZ-Si substrate using deep-level doping compensation has been proposed by Mallik et al. in 2003 [2]. The basic principle of this method is compensating shallow impurities with deep impurities, i.e. shallow donors are being compensated by deep acceptors (as shown in figure 2.1) whereas shallow acceptors are being compensated by deep donors (as shown in figure 2.2). Figure 2.1: Compensation between shallow donors and deep acceptors [26] Figure 2.2: Compensation between shallow acceptors and deep donors [26] As illustrated in figure 2.1, deep acceptors introduced an energy level at EA, which is close to the intrinsic Fermi level. The deep acceptors which are negatively charged attract the minority carrier holes to be trapped at EA level. The electrons from shallow donors are initially excited to the conduction band, then fall to EA level to recombine with the holes. On the other hand, the positively charged deep donors introduced an energy level at ED as shown in figure 2.2. The minority carrier electrons are attracted and trapped at ED level while the holes from shallow acceptors will fall into valence band. The trapped electrons at ED level then fall into valence band to recombine with the holes. Therefore, there is no generation of free carriers which reduces the resistivity of the substrate in both cases. Figure 2.3 shows the resistivity of Si at 300K with a background boron concentration of 1014 cm-3, compensated using deep donor impurities with generic energy level positions below conduction band edge, ED. It can be observed that the resistivity of Si increases until a maximum value is reached while the concentration of deep donors, ND increases. The resistivity is low initially due to undercompensation caused by insufficient number of deep donors. The maximum value of the resistivity of Si is reached when deep donors exactly compensate the boron acceptors. Further increase in ND causes overcompensation which results in a fall in the resistivity of Si, making the substrate tends to become n-type. Figure 2.3: Calculated resistivity of Si at 300K as a function of generic donor concentration for background boron concentration of 1014 cm-3 [2] Table 2.2: Positions of energy levels of transition elements in Si [27] Element Donor level below EC (eV) Acceptor level above EV (eV) Co 0.89 0.82 Pd 0.84 0.9 Au 0.78 0.56 Ag 0.75 0.545 V 0.45 0.92 Mn 0.42 1.0 Pt 0.314 0.889 It can be noted that the resistivity peaks are sharper for ED which is lower than 0.3 eV while the resistivity remains high over a range of relatively low concentration values for larger values of ED. For small values of ED, almost all donors are ionised and take part in the compensation since the donor energy level is nearer to the conduction band than Fermi level. A slight increase in ND causes the resistivity to decrease sharply, changing the material to n-type. Meanwhile, for large values of ED, the donor level is near intrinsic Fermi level and less fraction of deep donors is ionised. Therefore, the compensation change gradually with the increase in ND and the resistivity remain high over a wide range of ND. The transition elements are used as deep level dopants as they introduce a pair of deep donor and deep acceptor levels into the Si band gap as shown in table 2.2. The deep dopant energy levels introduced by the transition elements pin the Fermi level near the middle of the Si band gap as shown in figure 2.4 [15]. Thus, high resistivity CZ-Si substrate can be achieved by capturing the free carriers by deep impurities, which reduces the concentration of background free carrier. Figure 2.4: Fermi level pin by deep levels introduced by transition elements [15] Figure 2.5: Calculated resistivity of Si at 300K as a function of Au, Ag, Co and Pd for three different background boron concentration in cm-3 [2] Figure 2.6: Calculated resistivity of Si at 300K as a function of (a) Pt (b) V and (c) Mn concentrations for three different background boron concentrations in cm-3 [2] Figure 2.7: Calculated resistivity of Si as a function of Au concentration for n-type and p-type Si with a shallow doping concentration of 1014 cm-3 [28] The transition element dopants are generally grouped into two categories: Au, Ag, Co and Pd are in first category whereas Pt, V and Mn are in second category. As illustrated in figure 2.5, the resistivity of p-type CZ-Si substrate increases with increasing concentration of the deep dopants in first category. The behaviour of impurities in first category is due to presence of both deep donor and acceptor levels very near intrinsic Fermi level of Si bandgap. For Au and Ag, the resistivity of Si reaches a plateau at the concentration of deep dopants over 1016 cm-3 for three different background boron concentration. The reason for the slight difference in the behaviour of Au and Ag is that the both donor and acceptor level is nearer to the middle in the Si bandgap as compared to Co and Pd. For the second category of deep dopants, the resistivity of p-type CZ-Si reaches a peak and then reduce sharply with the increase in the concentration of the deep dopants as shown in figure 2.6. The reason of the difference in the behaviour is that the impurities in second category have either donor or acceptor level near the intrinsic Fermi level. Therefore, the dopants in second category can only compensate for a single type of doped silicon substrate. The effect of using 3d transition elements as deep level dopants in n-type CZ-Si substrate has not been shown in the work by Mallik et al. Meanwhile, it is shown in the work by Jordan et al. that higher bulk resistivity of Au-compensated Si substrate can be achieved by using n-type CZ-Si as shown in figure 2.7 [28]. The n-type Au-compensated Si substrate with resistivity up to 70 kÃŽÂ ©-cm has been used by Nur Z. I. Hashim et al. for realisation of coplanar waveguides (CPW) on the substrate [29]. Therefore, the potential and problem of using 3d transition elements for deep level compensation in n-type CZ-Si substrate will be discussed in this work. 2.5  Summary The realisation of high resistivity bulk Si substrate using proton implantation method and helium-3 ion irradiation technique was studied. The fabrication of high-Q inductors and antenna has been done on the Si substrate produced using both methods. However, there are problems associated with both methods such as high product cost for proton implantation method and being comparably less studied for helium-3 ion irradiation. Therefore, the idea of creating a semi-insulating silicon substrate using deep-level doping compensation with 3d transition elements was proposed by Mallik et al. in 2003. The deep-level doping compensation method has since been well studied and used for the fabrication of coplanar waveguides and inductors by Nur Z. I. Hashim et al. References [1]I. D. Robertson and S. Lucyszyn, RFIC and MMIC Design and Technology. IET, 2001. [2]K. Mallik, R. J. Falster, and P. R. Wilshaw, Semi-insulating silicon using deep level impurity doping: problems and potential, Semicond. Sci. Technol., vol. 18, no. 6, p. 517, 2003. [3]Products Capabilities | EpiWorks, EpiWorks. [Online]. Available: http://www.epiworks.com/products-capabilities/. [Accessed: 28-Feb-2017]. [4]Global Manufacturing at Intel, Intel. [Online]. Available: http://www.intel.co.uk/content/www/uk/en/architecture-and-technology/global-manufacturing.html?wapkw=wafer+size_ga=1.16867193.1775779534.1436014173. [Accessed: 28-Feb-2017]. [5]K. Mallik, C. H. De Groot, P. Ashburn, and P. R. Wilshaw, Enhancement of resistivity of Czochralski silicon by deep level manganese doping, Appl. Phys. Lett., vol. 89, no. 11, p. 3, 2006. [6]Smart Cut technology, Smart Choice Soitec, Soitec. [Online]. Available: https://www.soitec.com/en/products/smart-cut. [Accessed: 28-Feb-2017]. [7]T. Yonehara and K. Sakaguchi, ELTRAN  ®Ãƒ ¢Ã¢â€š ¬Ã‚ ¯; Novel SOI Wafer Technology, vol. 4, no. 4, pp. 10-16, 2001. [8]S. Iwamatsu and M. Ogawa, Silicon-on-sapphire m.o.s.f.e.t.s fabricated by back-surface laser-anneal technology, Electron. Lett., vol. 15, no. 25, pp. 827-828, 1979. [9]G. K. Celler and S. Cristoloveanu, Frontiers of silicon-on-insulator, J. Appl. Phys., vol. 93, no. 9, pp. 4955-4978, 2003. [10]R. Dekker, P. G. M. Baltus, and H. G. R. Maas, Substrate transfer for RF technologies, IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 747-757, 2003. [11]N. Nenadovic, V. DAlessandro, L. K. Nanver, F. Tamigi, N. Rinaldi, and J. W. Slotboom, A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown, IEEE Trans. Electron Devices, vol. 51, no. 1, pp. 51-62, 2004. [12]RF and AMS tech for wireless communications, International Technology Roadmap for Semiconductors, 2009. [Online]. Available: http://www.itrs2.net/itrs-reports.html. [Accessed: 28-Feb-2017]. [13]S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed. New York: John Wiley and Sons, 2002. [14]High resistivity silicon for GHz and THz technology, Topsil. [Online]. Available: http://www.topsil.com/en/silicon-products/silicon-wafer-products/hiresTM.aspx. [Accessed: 28-Feb-2017]. [15]D. M. Jordan, R. H. Haslam, K. Mallik, and P. R. Wilshaw, The Development of Semi-Insulating Silicon Substrates for Microwave Devices, Electrochem. Soc., vol. 16, no. 6, pp. 41-56, 2008. [16]N. Z. I. Hashim, A. Abuelgasim, and C. H. De Groot, Suppression of parasitic surface conduction in Au-compensated high resistivity silicon for 40-GHz RF-MMIC application, 2014 Asia-Pacific Microw. Conf., pp. 55-57, 2014. [17]J. Li, Novel semiconductor substrate formed by hydrogen ion implantation into silicon, Appl. Phys. Lett., vol. 55, no. 21, pp. 2223-2224, 1989. [18]C. Liao et al., Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors, IEEE Electron Device Lett., vol. 19, no. 12, pp. 461-462, 1998. [19]Y. H. Wu et al., Fabrication of very high resistivity Si with low loss and cross talk, IEEE Electron Device Lett., vol. 21, no. 9, pp. 442-444, 2000. [20]A. B. M. H. Rashid, S. Watanabe, and T. Kikkawa, High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnect, IEEE Electron Device Lett., vol. 23, no. 12, pp. 731-733, 2002. [21]L. S. Lee et al., Isolation on Si wafers by MeV proton bombardment for RF integrated circuits, IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 928-935, 2001. [22]W. Wondrak and A. Boos, Helium Implantation for Lifetime Control in Silicon Power Devices, ESSDERC 87 17th Eur. Solid State Device Res. Conf., pp. 649-652, 1987. [23]R. Wu et al., A 60-GHz efficiency-enhanced on-chip dipole antenna using helium-3 ion implantation process, 2014 44th Eur. Microw. Conf., pp. 108-111, 2014. [24]N. Li et al., High-Q inductors on locally semi-insulated Si substrate by helium-3 bombardment for RF CMOS integrated circuits, 2014 Symp. VLSI Technol. Dig. Tech. Pap., pp. 1-2, 2014. [25]N. Li et al., Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process, 2015 45th Eur. Solid State Device Res. Conf., pp. 254-257, 2015. [26]J. D. Puksec and V. Gradisnik, Influence of shallow impurity on steady-state probability function of multilevel deep impurity, 2000 10th Mediterr. Electrotech. Conf. Inf. Technol. Electrotechnol. Mediterr. Countries. Proc., vol. I, pp. 185-188, 2000. [27]W. Schroeter and M. Seibt, Deep Levels of Transition Metal Impurities in c-Si, in Properties of Crystalline Silicon, R. Hull, Ed. London: INSPEC IEE, 1999, p. 561. [28]D. M. Jordan, K. Mallik, R. J. Falster, and P. R. Wilshaw, Semi-Insulating Silicon for Microwave Devices, Solid State Phenom., vol. 156-158, pp. 101-106, 2009. [29]N. Z. I. Hashim, A. Abuelgasim, and C. H. De Groot, Coplanar waveguides on gold-doped high resistivity silicon for 67-GHz microwave application, RFM 2013 2013 IEEE Int. RF Microw. Conf. Proc., pp. 274-277, 2013.

Accounts Of The Holocaust Essay -- essays research papers fc

Accounts of the Holocaust The Holocaust was the systematic annihilation of six million Jews by the Nazi regime during the Second World War. I will tell the story of the Holocaust through many different personal accounts of people involved in many different sides of this incredible story. I will do this by using the personal accounts of surviving victims, of those not directly involved in the event, though affected by it, and the defense of the Nazi party. But first, I will tell you a little about the event. The Holocaust began in 1938 and lasted until 1945. This was most definitely the hardest seven years the Jewish population has ever faced. In 1933 approximately nine million Jews lived in the 21 European countries occupied by Germany during the war. The rise of the Nazi party’s anti-Semitism became noticeable in 1935 when laws were put forth limiting the rights of all German Jews. For the Jewish population the hardest time came with the introduction of the concentration camps. Jewish people were Cordova 2 stripped from their homes and hiding places by the German special police services such as the Special State Police (the Gestapo), the Storm Troopers (S.A.), and the Security Police (S.S.). The Jews were transported, in mass amounts, to different Concentration and Extermination Camps throughout Europe. Here they were forced into labor and exterminated when found to be useless to the Nazis. To explain the cause of the Holocaust we must first look at the situation through the eyes of the Nazi party. They truly believed that the Jewish population was the enemy and that annihilation was the only way to rebuild Germany. Dr. Joseph Gobells, the author of The Gobells Diaries, and a member of the Nazi party explained: The Jews have deserved the catastrophe that has now overtaken them. Their destruction will go hand in hand with the destruction of our enemies. We must hasten this process with cold ruthlessness. We shall thereby render an inestimable service to a humanity tormented for thousands of years by the Jews. This uncompromising anti-Semitic attitude must prevail among our own people despite all objectors. (www.virtual.co.il,1) Nazis felt that in order to build a perfect world all the impure Cordova 3 people, such as the Jews, must be exterminated. The Nazi party also expressed why all Jews, including women and children, were targeted. Heinr... ... dear G-d in a world gone mad and I have seen evil unleashed beyond reason or understanding. I was with them. We drank from the same bitter cup. I hid with them Feared with them, Struggled with them And when the killing was finally done I had survived while millions had died. I do not know why I have asked many questions for which there are no answers And I have even cursed my life thinking I could not endure the pain. But a flame inside refused to die. I could not throw away What had been ripped away from so many. In the end I had to choose life. I had to struggle to cross the bridge between the dead and the living. I had to rebuild what had been destroyed. I had to deny death Another victory. Bibliography www.about.com/holocaust www.members.home.net/captianhall/david_e.html#PreWarDaysOUR www.remember.org/malka.html 1 www.remember.org/witness/lipetz.htm 2 www.virtual.co.il/education/education/holocaust/quote/gobells.htm 1 www.virtual.co.il/education/education/holocaust/quote/himmler.htm 2 www.virtual.co.il/education/education/holocaust/quote/hitler.htm 3   Ã‚  Ã‚  Ã‚  Ã‚  

Pygmalion and Society at the Time Essay -- Papers

Pygmalion and Society at the Time In this essay I will be discussing Bernard Shaw's representation of Edwardian Society in 'Pygmalion'. Shaw was a member of the Fabian Society; a collection of middle class people who believed that capitalism had created an unjust and unfair society. They were concerned about the unreasonable and imbalanced class system of the time and wanted to 'reconstruct society', creating an equal and fair civilisation with no class divide, which was so blatantly obvious due to the ignorance between classes. The rich lived lifestyles of luxury; the men would earn livings through land and property they owned and through careers such as scientists, lawyers and accountants. In the summer, they enjoyed a whole season of entertainment at their London house for tea and dinner parties, dances and visits to the theatre. In winter, they had holidays abroad and spent weekends at each other's country houses. The men went shooting and hunting and the ladies entertained themselves horse riding. Meanwhile, the poor were struggling on the dirty streets earning a pittance for manual jobs in workhouses and places similar. Conditions for them were sometimes so bad that they were forced to live in ridiculously over-crowded houses with other poor families. They could not afford new clothes or even food at times. They could certainly not afford luxuries like the rich enjoyed. The setting of Eliza's home and Mrs. Higgins' home show the both the pitiable living condition of the poor and the far from modest living conditions of the wealthy. Eliza can only afford the basic needs; a place to sleep, one set of clothes and limited light... ...h man, 'I sold flowers not myself.' Eliza's ability to reprimand Higgins is a bit of a shame for Higgins, as he is being scolded by someone who he had always considered lower than him. This illustrates again the fact that money does not buy you respect or manners and does not make you a good person. Shaw wanted the middle classes to realise and consider the working class. He was convinced that the way to alleviate the problem of poverty in society was to provide equal opportunity for all. This message is depicted in Eliza's transformation. Shaw also attacks middle class values and brands them hypocrites. He suggests that exposure to working class values might do them some good and teach them a valuable lesson. It is an influential message from start to finish and will persuade many people to consider others more.